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| Composite Transistors XP0111M Silicon PNP epitaxial planer transistor Unit: mm 2.10.1 0.425 1.250.1 0.425 0.20.05 0.12 - 0.02 +0.05 For switching/digital circuits 0.65 s Features q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.00.1 1 2 3 5 0.65 4 0.9 0.1 q UN211M x 2 elements 0.70.1 s Basic Part Number of Element 0.2 0 to 0.1 0.20.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings -50 -50 -100 150 150 -55 to +150 Unit V V mA mW C 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC-88A S-Mini Type Package (5-pin) Marking Symbol: EK Internal Connection 1 Tr1 5 C 2 3 Tr2 4 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency *1 (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 fT VCB = -10V, IE = 1mA, f = 200MHz Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k -30% 2.2 0.047 80 MHz -4.9 - 0.2 +30% 80 0.5 0.99 - 0.25 V V V k min -50 -50 - 0.1 - 0.5 - 0.2 typ max Unit V V A A mA Ratio between 2 elements 1 Composite Transistors PT -- Ta 250 XP0111M Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) IC -- VCE 240 -10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 500 hFE -- IC VCE= -10V -3 -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 -1 25C Ta=75C 200 Forward current transfer ratio hFE Collector current IC (mA) 160 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA 400 300 120 200 Ta=75C 25C -25C 80 -0.5mA -0.4mA -0.3mA -25C 40 100 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 10 IO -- VIN 10-4 f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 8 Output current IO (A) Input voltage VIN (V) 10-3 -10 -3 -1 -0.3 -0.1 -0.03 6 10-2 4 10-1 2 0 -0.1 -0.3 -1 -3 -10 -30 -100 1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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